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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：65 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：9710 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：234W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK954R8-60E is a logic level N-channel MOSFET utilizing TrenchMOS technology in a TO-220AB (SOT78A) package. It features a 60 V drain-source voltage and supports a continuous drain current of 100 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 4.9 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 234 W under specified conditions, with a junction temperature range of -55 °C to 175 °C.
Feature Summary
- Qualified to AEC Q101 standard for automotive applications
- Repetitive avalanche rated for rugged operation
- True logic level gate with threshold voltage greater than 0.5 V at 175 °C
- Suitable for thermally demanding environments due to 175 °C rating
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure the selected component matches the required thermal management capabilities for the intended application environment.
Selection Notes
Select this component for high-current switching applications requiring low conduction losses and robust avalanche capability. The true logic level gate drive allows compatibility with standard 5 V control signals while maintaining low on-resistance. Consider the TO-220AB package for effective heat dissipation in chassis-mounted designs where thermal resistance to ambient is a critical design parameter.
Part Context
This part belongs to the Nexperia BUK954 series of N-channel TrenchMOS logic level FETs. The series is engineered for high-performance automotive and industrial power switching. The specific model utilizes advanced trench gate technology to achieve superior conductivity and switching efficiency compared to planar technologies.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinout configurations, thermal characteristics, and electrical limits when considering alternative packages or manufacturers.
