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Product Detailed Parameters
- Description：MOSFET N-CH 100V 120A TO220AB
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：133 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：17.46 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：349W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Download product information
Overview
The BUK956R1-100E is a logic level N-channel MOSFET utilizing TrenchMOS technology in a TO-220AB (SOT78A) package. It features a drain-source voltage of 100 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 4.85 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 349 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Compliant with AEC Q101 standards for high-performance automotive applications
- Features true logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
- Suitable for thermally demanding environments due to 175 °C maximum junction temperature rating
- Repetitive avalanche rated for robust performance in switching applications
Applications
- 12V, 24V and 48V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and marking details. Ensure the procurement channel provides valid traceability for automotive-grade components. Confirm that the received units match the SOT78A package outline and electrical specifications defined in the product data sheet prior to integration into designs.
Selection Notes
Select this component for applications requiring low on-state resistance and high current handling in automotive environments. The logic level gate drive capability allows direct interfacing with standard control signals. Consider the thermal resistance characteristics and mounting base requirements when designing heat dissipation solutions for high-power switching scenarios.
Part Context
This device belongs to the Nexperia BUK9 series of N-channel TrenchMOS logic level FETs. It is designed specifically for automotive use, meeting AEC-Q101 qualification standards. The product utilizes advanced trench technology to achieve low conduction losses while maintaining ruggedness suitable for harsh operating conditions found in modern vehicle electrical systems.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and thermal characteristics carefully when replacing components in existing designs to ensure compatibility with mounting structures and circuit parameters.
