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The BUK9575-55A,127 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. Designed for automotive critical applications, it complies with AEC-Q101 standards and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 55 V, a continuous drain current of 20 A at 25 °C mounting base temperature, and a total power dissipation of 62 W. The device features low on-state resistance, ranging from 58 mΩ to 81 mΩ depending on gate drive conditions, ensuring efficient power switching.
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and reel specifications. Confirm current product status as automotive components may undergo lifecycle changes. Ensure compatibility with existing thermal management designs given the TO-220AB package constraints. Cross-reference pinout configurations to prevent integration errors during PCB assembly.
Select this component for applications requiring robust automotive-grade reliability and high current handling capabilities. The logic level gate threshold simplifies driver circuit design by allowing direct interfacing with standard logic outputs. Evaluate thermal performance requirements carefully, as the device supports high junction temperatures but requires adequate heatsinking to maintain specified current ratings under continuous load conditions.
This part belongs to the BUK95 series of N-channel TrenchMOS logic level FETs manufactured by Nexperia. The series is engineered for high-performance automotive systems where space efficiency and thermal resilience are critical. The TO-220AB package provides a cost-effective solution for medium-power applications while maintaining the electrical characteristics expected from advanced trench technology.
BUK9675-55A shares identical electrical specifications and pinout configuration within the same family.