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Product Detailed Parameters
- Description：MOSFET N-CH 40V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.3V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：128 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：8260 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The Nexperia BUK9604-40A,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) surface-mount package. Designed for automotive critical applications, it complies with AEC-Q101 standards and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 75 A, and a total power dissipation of 300 W at 25 °C mounting base temperature. The device exhibits low on-state resistance ranging from 2.9 mΩ to 5.9 mΩ depending on gate drive conditions.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards
- Low conduction losses enabled by low on-state resistance
- Compatible with logic level gate drive sources
- Operates reliably in thermally demanding environments up to 175 °C
Applications
- 12 V loads
- Automotive power switching
- General purpose power switching
- Motor control circuits
- Lamp and solenoid driving
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with low on-resistance and high current handling capabilities. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDSon performance. Consider thermal management strategies given the 300 W dissipation rating and the necessity of adequate heat sinking to maintain junction temperatures within safe operating limits during continuous operation.
Part Context
This part belongs to the BUK96xx series of N-channel TrenchMOS FETs from Nexperia. It shares architectural similarities with other devices in the family but is distinguished by its specific 40 V voltage rating and 75 A current capacity. The D2PAK package provides a balance between thermal performance and board space efficiency, making it suitable for various power management applications.
Replacement Considerations
Check datasheets for alternative parts offering compatible voltage, current, and package dimensions. Verify that any substitute meets AEC-Q101 requirements if used in automotive contexts. Confirm pinout compatibility and thermal characteristics to ensure seamless integration without redesigning the PCB layout or cooling system.
