BUK9606-40B,118

BUK9606-40B,118

$1.65
  • Description:MOSFET N-CH 40V 75A D2PAK
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:9cafa182780e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 40V 75A D2PAK
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:44 nC @ 5 V
  • Vgs (Max):±15V
  • Input Capacitance (Ciss) (Max) @ Vds:4901 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):203W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9606-40B,118

Overview

The BUK9606-40B,118 is an N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. It features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 6.4 mΩ at VGS=5V and 4.15 mΩ at VGS=10V. Total power dissipation reaches 203 W with a junction-to-mounting base thermal resistance of 0.74 K/W. It supports a junction temperature up to 175 °C and includes avalanche ruggedness rated at 494 mJ.

Feature Summary

  • AEC-Q101 compliant for automotive critical applications
  • Logic level gate drive compatibility
  • Low conduction losses via low on-state resistance
  • Operates in thermally demanding environments up to 175 °C

Applications

  • Automotive systems
  • 12 V loads
  • Motors, lamps and solenoids
  • General purpose power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring logic-level control for high-current switching applications. Ensure the PCB footprint matches the SOT404 outline dimensions. Verify that the gate drive voltage meets the minimum threshold requirements for full enhancement. Consider the thermal management strategy carefully, as continuous current is limited by the package's ability to dissipate heat to the mounting base.

Part Context

This part belongs to Nexperia's TrenchMOS family, designed using Philips High-Performance Automotive technology. It is distinct from the BUK964R4-40B, which shares similar electrical ratings but may differ in packaging or specific parameter tolerances. The BUK9606-40B is specifically qualified for automotive use under AEC-Q101 standards, ensuring reliability in vehicle electronics.

Replacement Considerations

Check datasheets for alternative N-channel MOSFETs with matching 40V VDS and comparable RDS(on). Verify pinout compatibility with the D2PAK/SOT404 package. Ensure any substitute also holds AEC-Q101 qualification if used in automotive contexts.

FAQ

Is Pin 2 connected internally?

No, it is not possible to make a connection to Pin 2. Pin 1 is the Gate, Pin 3 is the Source, and the mounting base (connected to Drain) serves as the third terminal.

What is the maximum non-repetitive avalanche energy?

The device can withstand a non-repetitive drain-source avalanche energy of 494 mJ under specified conditions (ID=75A, Vsup≤40V).

BUK9606-40B,118BUK9606-40B,118
$1.65
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