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The BUK9606-40B,118 is an N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. It features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 6.4 mΩ at VGS=5V and 4.15 mΩ at VGS=10V. Total power dissipation reaches 203 W with a junction-to-mounting base thermal resistance of 0.74 K/W. It supports a junction temperature up to 175 °C and includes avalanche ruggedness rated at 494 mJ.
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Select this component when designing circuits requiring logic-level control for high-current switching applications. Ensure the PCB footprint matches the SOT404 outline dimensions. Verify that the gate drive voltage meets the minimum threshold requirements for full enhancement. Consider the thermal management strategy carefully, as continuous current is limited by the package's ability to dissipate heat to the mounting base.
This part belongs to Nexperia's TrenchMOS family, designed using Philips High-Performance Automotive technology. It is distinct from the BUK964R4-40B, which shares similar electrical ratings but may differ in packaging or specific parameter tolerances. The BUK9606-40B is specifically qualified for automotive use under AEC-Q101 standards, ensuring reliability in vehicle electronics.
Check datasheets for alternative N-channel MOSFETs with matching 40V VDS and comparable RDS(on). Verify pinout compatibility with the D2PAK/SOT404 package. Ensure any substitute also holds AEC-Q101 qualification if used in automotive contexts.
No, it is not possible to make a connection to Pin 2. Pin 1 is the Gate, Pin 3 is the Source, and the mounting base (connected to Drain) serves as the third terminal.
The device can withstand a non-repetitive drain-source avalanche energy of 494 mJ under specified conditions (ID=75A, Vsup≤40V).