BUK9607-30B,118

$0.43

Description：PFET, 108A I(D), 30V, 0.007OHM,
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:332ad4612b64 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：PFET, 108A I(D), 30V, 0.007OHM,
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BUK9607-30B,118

Overview

The BUK9607-30B,118 is an N-channel enhancement mode power transistor utilizing Philips High-Performance Automotive (HPA) TrenchMOS technology. It is housed in a SOT404 (D2-PAK) plastic package. The device features a drain-source voltage rating of 30 V and supports continuous drain currents up to 75 A at a mounting base temperature of 25 °C with a gate-source voltage of 5 V. Typical on-state resistance is 5.9 mΩ at 25 °C. Total power dissipation reaches 157 W at 25 °C. The junction temperature range spans from -55 °C to +175 °C.

Feature Summary

Compliant with AEC-Q101 automotive standards for critical applications.
Logic level compatible gate drive requirements.
Rated for operation in thermally demanding environments up to 175 °C.
Low on-state resistance characteristics.

Applications

Automotive systems
12 V loads
Motors, lamps and solenoids
General purpose power switching

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component meets current RoHS and REACH compliance standards as defined by the manufacturer's latest documentation. Ensure the procurement channel provides valid traceability for automotive-grade parts. Check for any recent Customer Product/Process Change Notifications that may affect specifications or manufacturing location.

Selection Notes

Select this component for designs requiring logic-level gate drive compatibility within automotive or industrial power switching contexts. The SOT404 package offers surface-mount integration suitable for high-current applications. Consider thermal management requirements given the 175 °C junction rating and power dissipation limits. Verify that the 30 V drain-source voltage aligns with system operating conditions and transient spikes.

Part Context

This part belongs to the BUK95/9607-30B series of TrenchMOS logic level FETs manufactured by Nexperia USA Inc. (formerly Philips Semiconductors). The series utilizes HPA TrenchMOS technology optimized for automotive reliability. The BUK9607-30B specifically denotes the D2-PAK package version, distinct from the TO-220AB variant.