BUK9608-55A,118

$1.76

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:edf6c7bef444 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：92 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：6021 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：253W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9608-55A,118

Overview

The BUK9608-55A,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications, it features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, with typical values of 6.4 mΩ at VGS=10V and 8.5 mΩ at VGS=4.5V. It supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 670 mJ.

Feature Summary

Low conduction losses achieved through minimized on-state resistance
Qualified for automotive critical applications per AEC-Q101 standards
Compatible with logic level gate drive sources for simplified control
Operates reliably in thermally demanding environments with a 175 °C rating

Applications

12 V and 24 V load switching
Automotive and general purpose power switching
Motors, lamps and solenoids control

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when low on-state resistance is required for efficiency in logic-level driven circuits. Ensure the application operates within the 55 V drain-source voltage limit and manages thermal dissipation appropriately given the 253 W total power dissipation capability at 25 °C mounting base temperature. Confirm compatibility with the D2PAK footprint during PCB layout.

Part Context

This part belongs to the Nexperia BUK96 series of N-channel TrenchMOS logic level FETs. These devices are engineered for high-performance switching applications requiring robust automotive qualification. The series utilizes advanced trench gate technology to achieve superior conductivity compared to standard planar MOSFETs, making them suitable for dense power management designs.

Replacement Considerations

Consult official Nexperia documentation for verified cross-reference part numbers. Do not substitute based solely on pinout or generic voltage/current ratings without verifying thermal characteristics and avalanche energy limits.