BUK9609-55A,118

$0.76

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:59ecea9e0ba1 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：4.633 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：211W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9609-55A,118

Overview

The BUK9609-55A,118 is an N-channel enhancement mode power transistor utilizing TrenchMOS technology in a SOT404 (D2-PAK) package. It features a drain-source voltage of 55 V and a continuous drain current of 108 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 7.69 mΩ at VGS = 5 V and ID = 25 A. It supports a junction temperature up to 175 °C and includes Q101 compliance.

Feature Summary

TrenchMOS logic level technology for enhanced performance
Q101 compliant automotive qualification
Logic level compatible gate drive requirements
High thermal stability rated for 175 °C junction temperature

Applications

Automotive and general purpose power switching
12 V and 24 V load control
Motor, lamp, and solenoid driving

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for high-current switching applications requiring low conduction losses. Ensure the PCB footprint matches the SOT404 outline dimensions. Verify that the gate drive voltage meets the logic level compatibility requirements for optimal RDSon performance. Confirm thermal management strategies align with the specified junction-to-mounting base thermal resistance.

Part Context

This part belongs to the BUK95/9609 series of N-channel enhancement mode field-effect power transistors. The series utilizes TrenchMOS technology to achieve very low on-state resistance. While the BUK95 variant uses the SOT78 package, the BUK96 variant specifically employs the SOT404 surface mount package.

Replacement Considerations

BUK9509-55A is the pin-compatible alternative housed in the SOT78 (TO-220AB) through-hole package. Both share identical electrical characteristics but differ in physical form factor and mounting method.