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Product Detailed Parameters
- Description：MOSFET N-CH 75V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：8840 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：230W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK9609-75A,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 75 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 7.69 mΩ at VGS=5V and ID=25A. It supports a total power dissipation of 230 W and operates with junction temperatures up to 175 °C.
Feature Summary
- Low conduction losses achieved through low on-state resistance
- Qualified for high-performance automotive applications per AEC-Q101 standard
- Compatible with logic level gate drive sources
- Operates reliably in thermally demanding environments with a 175 °C rating
Applications
- 12 V, 24 V and 42 V load switching
- Automotive and general purpose power switching
- Motors, lamps and solenoids control
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring robust N-channel switching with logic-level compatibility. Ensure the thermal management strategy accounts for the 0.65 K/W junction-to-mounting-base thermal resistance to maintain junction temperature within limits under high current conditions. Verify that the gate drive voltage aligns with the specified threshold characteristics for optimal RDSon performance.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode FETs. These devices are engineered for high efficiency and reliability in power switching applications. The D2PAK package provides a balance of current handling capability and surface-mount convenience, making it suitable for board-level integration in automotive and industrial systems.
Replacement Considerations
Consult official Nexperia documentation for qualified substitutes. Cross-reference pinout, voltage ratings, and thermal characteristics when evaluating alternatives.
