BUK9610-100B,118

$1.73

Description：MOSFET N-CH 100V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2c7101af7afc Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：9.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：86 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：11045 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9610-100B,118

Overview

The BUK9610-100B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT404 (D2PAK) plastic package. Designed for automotive critical applications, it meets AEC-Q101 standards with a 175 °C junction temperature rating. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 8.3 mΩ at VGS=10V and 25 °C, supporting efficient power switching.

Feature Summary

AEC-Q101 compliant for automotive reliability
Logic level gate drive compatibility
High thermal performance up to 175 °C
Low conduction losses via optimized on-state resistance

Applications

12 V, 24 V and 42 V load switching
Automotive systems control
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches project requirements. Confirm package variant and manufacturing origin against the latest Nexperia datasheet revision. Ensure supply chain sources are authorized distributors to guarantee component authenticity and traceability. Check for any recent product change notices affecting specifications or assembly locations before finalizing procurement orders.

Selection Notes

Select this component for high-current automotive applications requiring logic-level gate drive compatibility. The D2PAK package supports significant power dissipation when mounted correctly. Evaluate thermal management strategies to maintain junction temperatures within the 175 °C limit. Consider the avalanche ruggedness rating if unclamped inductive switching scenarios are present in the circuit design.

Part Context

This part belongs to the Nexperia BUK96 series of N-channel TrenchMOS logic level FETs. These devices are engineered for robust performance in demanding environments. The series emphasizes low on-resistance and high thermal stability, making them suitable for modern automotive electrical architectures where efficiency and reliability are critical design constraints.

Replacement Considerations

Consult the Nexperia BUK96 series documentation for compatible alternatives. Verify pinout compatibility and electrical parameter overlaps before substitution. Cross-reference package dimensions to ensure mechanical fit within the existing PCB footprint without redesigning the layout.