BUK9615-100E,118

$2.52

Description：MOSFET N-CH 100V 66A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d56866104f06 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 66A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：14mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：6813 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：182W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9615-100E,118

Overview

The BUK9615-100E is a logic level N-channel MOSFET utilizing TrenchMOS technology in a D2PAK (SOT404) package. It features a drain-source voltage of 100 V and a continuous drain current of 66 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 15 mΩ at VGS = 5 V and ID = 15 A. Total power dissipation reaches 182 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

AEC Q101 compliant for high performance automotive applications
True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
Repetitive avalanche rated for ruggedness
Suitable for thermally demanding environments due to 175 °C rating

Applications

12V, 24V and 48V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel size or tape specifications. Confirm that the component meets the required AEC Q101 qualification standards for your target application environment. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.

Selection Notes

Select this component when low gate drive voltage compatibility is required alongside high current handling capabilities. The logic level gate characteristic allows direct interfacing with standard logic controllers without additional driver stages. Consider the D2PAK package for its robust surface-mount footprint and efficient heat dissipation through the exposed drain pad.

Part Context

This part belongs to the Nexperia BUK9 series of N-channel TrenchMOS logic level FETs. These devices are engineered for automotive reliability and high-efficiency power switching. The series utilizes advanced trench gate technology to minimize conduction losses while maintaining fast switching speeds suitable for modern electronic control units.