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Product Detailed Parameters
- Description：MOSFET N-CH 55V 66A D2PAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：3085 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：138W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK9616-55A,118 is an N-channel enhancement mode logic level field-effect power transistor manufactured by Nexperia. It utilizes TrenchMOS technology to achieve very low on-state resistance. The device is available in TO220AB and SOT404 plastic envelopes. Key electrical parameters include a drain-source voltage of 55 V, a DC drain current of 66 A at 25 °C mounting base temperature, and a total power dissipation of 138 W. The typical drain-source on-state resistance is 16 mΩ at VGS = 5 V and 15 mΩ at VGS = 10 V.
Feature Summary
- Logic level gate drive capability for direct interface with standard logic circuits
- TrenchMOS technology providing enhanced switching performance and low conduction losses
- Robust avalanche energy rating for handling inductive load switching events
Applications
- Automotive general purpose switching applications
- DC-DC converter circuits
- Motor control systems
Procurement Notes
Verify the manufacturer designation carefully, as the former NXP Standard Product business was rebranded as Nexperia in February 2017. Ensure that documentation references align with the current Nexperia entity rather than legacy NXP or Philips Semiconductors branding when sourcing technical specifications or support materials.
Selection Notes
Select this component for designs requiring high current handling capabilities within a 55 V system. The logic level specification allows for efficient driving from 5 V logic sources without additional gate driver stages. Consider thermal management requirements based on the specific package variant chosen, as heat dissipation characteristics differ between through-hole and surface-mount configurations.
Part Context
This part belongs to the BUK9 series of N-channel MOSFETs. It is specifically designated as the logic level variant (BUK96) compared to the standard level version (BUK95). Both variants share identical electrical ratings but differ in gate threshold voltage characteristics to accommodate different drive voltage requirements.
Replacement Considerations
The datasheet explicitly lists the BUK9516-55A as a related part within the same product family. Designers should verify gate drive voltage compatibility when substituting between the logic level (BUK96) and standard level (BUK95) variants.
