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Product Detailed Parameters
- Description：MOSFET N-CH 75V 67A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：4034 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：157W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK9616-75B,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT404 (D2PAK) plastic package. Designed for automotive critical applications, it features a drain-source voltage of 75 V and a continuous drain current of 67 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 14 mΩ at VGS=10V and 16.4 mΩ at VGS=5V. It supports junction temperatures up to 175 °C and includes repetitive avalanche ruggedness rated at 140 mJ.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Logic level gate drive compatibility
- Low conduction losses via low on-state resistance
- High thermal tolerance with 175 °C rating
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring logic-level gate control without additional driver circuitry. Ensure the PCB footprint matches the SOT404 outline dimensions. Verify that the application's peak current demands do not exceed the pulsed limit of 270 A. Confirm thermal management strategies align with the specified junction-to-mounting base thermal resistance values under expected operating conditions.
Part Context
This part belongs to Nexperia's BUK9 series of N-channel TrenchMOS logic level FETs. These devices are engineered for high-performance switching in automotive environments. The D2PAK package provides robust surface-mount capabilities with an integrated drain mounting base for efficient heat dissipation, distinguishing it from standard three-lead packages.
Replacement Considerations
Consult official Nexperia documentation for qualified alternatives. Cross-referencing requires matching voltage, current, RDS(on), and package specifications.
