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Product Detailed Parameters
- Description：MOSFET N-CH 55V 61A D2PAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：2210 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK9618-55A is an N-channel enhancement mode power transistor utilizing TrenchMOS™ technology, housed in the SOT404 (D2-PAK) plastic package. It features a drain-source voltage rating of 55 V and a continuous drain current capability of 61 A at a mounting base temperature of 25 °C. The device exhibits low on-state resistance, with typical values ranging from 12 mΩ to 18 mΩ depending on gate drive conditions. It supports a maximum junction temperature of 175 °C and includes an integrated source-drain diode.
Feature Summary
- TrenchMOS™ technology for low on-state resistance
- Logic level compatible gate drive
- High thermal stability rated up to 175 °C junction temperature
- Q101 compliant robustness
Applications
- Automotive power switching for 12 V loads
- General purpose power switching for 24 V loads
- Motor control applications
- Lamp and solenoid driving
Procurement Notes
Verify the specific ordering code suffix matches the required package variant. Confirm that the component status aligns with current production requirements, as datasheet information may reflect historical product lifecycle stages. Ensure compatibility with existing thermal management designs given the D2-PAK package constraints.
Selection Notes
Select this component for applications requiring logic-level gate drive compatibility and high current handling in a surface-mount format. Evaluate thermal dissipation requirements against the specified power derating curves. Consider the internal source-drain diode characteristics for inductive load switching scenarios.
Part Context
This device belongs to the BUK9 series of TrenchMOS™ logic level FETs manufactured by NXP USA Inc. (formerly Philips Semiconductors). It shares core electrical specifications with the through-hole BUK9518-55A variant but utilizes the SOT404 surface-mount package for PCB integration.
Replacement Considerations
BUK9518-55A: Electrically equivalent N-channel MOSFET with identical pinout and specifications, differing only in the SOT78 (TO-220AB) through-hole package.
