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Product Detailed Parameters
- Description：MOSFET N-CH 30V 120A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：1.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：93.4 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：14.5 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：324W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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FAQ
Is the BUK961R5-30E,118 an automotive-grade component?
Yes, this component is AEC-Q101 qualified for use in automotive critical applications.
What technology does the BUK961R5-30E utilize?
It utilizes TrenchMOS logic level technology to achieve low on-state resistance and high efficiency.
