BUK961R6-40E,118

$4.15

Description：MOSFET N-CH 40V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cc52a27099b8 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：16400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：357W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK961R6-40E,118

Overview

The BUK961R6-40E is a logic level N-channel MOSFET utilizing TrenchMOS technology in a SOT404 (D2PAK) package. It features a drain-source voltage of 40 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 1.6 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 349 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

AEC Q101 compliant for high performance automotive applications
Repetitive avalanche rated for robust operation
Suitable for thermally demanding environments with a 175 °C rating
True logic level gate with threshold voltage greater than 0.5V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and reel specifications. Confirm that the component status remains active or qualified for production before finalizing design-in decisions. Cross-reference the marking code 'BUK961R6-40E' with physical samples to authenticate the source and prevent counterfeit procurement risks.

Selection Notes

Select this component when low conduction losses are critical due to its low on-state resistance. It is appropriate for designs requiring true logic level gate drive compatibility at elevated temperatures. Consider the thermal resistance characteristics and the D2PAK package footprint when evaluating heat dissipation requirements for the target application environment.

Part Context

This part belongs to Nexperia's TrenchMOS family, designed for high-performance switching. It utilizes advanced trench gate technology to achieve superior electrical performance compared to standard planar MOSFETs. The SOT404 package provides efficient thermal management through a dedicated mounting base connected to the drain terminal.