BUK9620-55A,118

$1.11

Description：MOSFET N-CH 55V 54A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:38f1904d0a5f Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 54A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：2210 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：118W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9620-55A,118

Overview

The BUK9620-55A,118 is an N-channel TrenchMOS logic level enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. It utilizes advanced TrenchMOS technology and is designed for automotive critical applications with AEC-Q101 compliance. The device features a D2PAK plastic surface-mounted package (SOT404). Key electrical parameters include a drain-source voltage of 55 V, a continuous drain current of 54 A at 25 °C mounting base temperature, and a total power dissipation of 118 W. The on-state resistance is specified as low as 15 mΩ at VGS = 10V and 25 °C junction temperature.

Feature Summary

Low conduction losses achieved through minimized on-state resistance
Qualified to the AEC-Q101 standard for automotive reliability
Compatible with logic level gate drive sources
Operates in thermally demanding environments up to 175 °C

Applications

12 V and 24 V load control
Automotive power switching systems
General purpose power switching
Motor, lamp, and solenoid control

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets the necessary AEC-Q101 qualification standards for your target application environment. Ensure thermal management designs account for the maximum junction temperature rating and power dissipation limits defined in the datasheet to maintain operational integrity.

Selection Notes

Select this component when low on-state resistance is critical for efficiency in high-current applications. The logic level gate drive compatibility simplifies driver circuit design. Verify that the operating voltage does not exceed the 55 V drain-source limit and that the thermal solution supports the 118 W dissipation capability under expected load conditions.

Part Context

This part belongs to the BUK9 series of N-channel TrenchMOS FETs from Nexperia. These devices are engineered for robust performance in automotive and industrial sectors. The D2PAK package provides efficient heat transfer capabilities suitable for power switching applications requiring high current handling and reliable operation under varying thermal conditions.