BUK9624-55A,118

$1.30

Description：MOSFET N-CH 55V 46A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:49e7b30badf3 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 46A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：21.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1815 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：105W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9624-55A,118

Overview

The BUK9624-55A is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT404 (D2PAK) plastic package. Designed for automotive critical applications, it features AEC-Q101 compliance and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 55 V, continuous drain current of 46 A at 25 °C, and total power dissipation of 105 W. The device exhibits low on-state resistance, typically 21.7 mΩ at VGS=10V and 24 mΩ at VGS=5V, ensuring efficient switching performance.

Feature Summary

AEC-Q101 compliant for automotive reliability
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Operates in thermally demanding environments with 175 °C rating

Applications

12 V and 24 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required package variant and ensure compatibility with your manufacturing process. Confirm that the component status remains active or qualified for long-term supply through official Nexperia channels before finalizing design-in decisions. Cross-reference the datasheet revision date against your project timeline to ensure all specifications align with current product definitions.

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with logic-level gate compatibility. The low RDS(on) minimizes thermal generation in high-current scenarios. Ensure the application environment respects the 175 °C maximum junction temperature limit. Verify that the gate drive voltage meets the threshold requirements for optimal conduction characteristics under expected load conditions.

Part Context

This part belongs to the Nexperia BUK96xx series of N-channel TrenchMOS logic level FETs. These devices are engineered for high-performance power switching applications, particularly within automotive systems where reliability and thermal stability are critical. The D2PAK package provides effective heat dissipation capabilities suitable for surface-mount assembly in compact electronic designs.