BUK9628-100A,118

$1.64

Description：MOSFET N-CH 100V 49A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e344c1ada9b0 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 49A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：4293 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：166W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9628-100A,118

Overview

The BUK9628-100A is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology, designed for automotive critical applications. It features a 100 V drain-source voltage rating and supports a continuous drain current of 49 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 17 mΩ at VGS = 10 V and 25 A. Total power dissipation reaches 166 W, with a junction temperature range up to 175 °C. Non-repetitive avalanche energy capability is rated at 45 mJ.

Feature Summary

Compliant with AEC-Q101 standards for automotive reliability
Low conduction losses achieved through minimized on-state resistance
Logic level gate drive compatibility for efficient control

Applications

Automotive power switching systems
General purpose power switching

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component status aligns with current production availability. Ensure design parameters remain within the absolute maximum ratings defined in the official datasheet. Cross-reference thermal management requirements against the specified junction-to-mounting base thermal resistance values.

Selection Notes

Select this component when automotive qualification is mandatory for power switching designs. The logic level gate threshold simplifies driver interface requirements compared to standard level devices. Evaluate thermal performance based on the 166 W dissipation limit and ensure adequate heat sinking to maintain junction temperatures below 175 °C during operation.

Part Context

This device belongs to Nexperia's TrenchMOS portfolio, engineered for high-performance automotive environments. It integrates advanced trench gate technology to optimize switching efficiency and ruggedness. The D2PAK (SOT404) package provides robust mechanical stability and effective thermal dissipation capabilities suitable for surface-mounted automotive electronics.