BUK9629-100B,118

$2.07

Description：MOSFET N-CH 100V 46A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b1c158063831 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 46A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：4360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：157W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Download product information

BUK9629-100B,118

Overview

The BUK9629-100B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK plastic package. It features a drain-source voltage of 100 V and a continuous drain current of 46 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 27 mΩ at VGS=10V and 29 mΩ at VGS=5V. Total power dissipation reaches 157 W, with an operating junction temperature range from -55 °C to +175 °C. Gate-source voltage limits are ±15 V, and total gate charge is typically 33 nC.

Feature Summary

AEC Q101 compliant for automotive critical applications
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Operates in thermally demanding environments up to 175 °C

Applications

12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for high-current switching applications requiring logic-level compatibility. Ensure thermal management supports the 157 W dissipation rating at the target ambient temperature. Verify that the gate drive voltage meets the minimum requirements for the desired on-state resistance performance.

Part Context

This part belongs to Nexperia's TrenchMOS logic level FET family. It is designed for robust performance in automotive environments, offering high current handling and low resistance in a surface-mount D2PAK package suitable for automated assembly.

Replacement Considerations

Check pinout compatibility and electrical parameters against existing designs. Verify package dimensions and thermal characteristics match the PCB footprint and cooling solution.