BUK9635-55A,118

$1.26

Description：MOSFET N-CH 55V 34A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:baf5527d5686 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 34A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：32mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1173 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：85W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9635-55A,118

Overview

The BUK9635-55A,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK plastic package. It is qualified to AEC-Q101 standards for automotive applications. Key electrical parameters include a drain-source voltage of 55 V and a continuous drain current of 34 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, with maximum values of 32 mΩ at VGS=10V and 35 mΩ at VGS=5V, both measured at ID=25A and Tj=25°C. Total power dissipation is rated at 85 W under the same thermal conditions.

Feature Summary

Compliant with AEC-Q101 qualification standards for automotive critical applications
Utilizes TrenchMOS technology to achieve low conduction losses through minimized on-state resistance

Applications

Automotive power switching systems
General purpose power switching circuits

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration, as variations exist between tape-and-reel, cut tape, and Digi-Reel formats. Confirm that the component status remains active and check for any recent Product Change Notices regarding assembly or material updates. Ensure the requested quantity aligns with standard manufacturing reel sizes to avoid partial reel handling issues during production integration.

Selection Notes

Select this component when designing circuits requiring robust automotive-grade reliability combined with efficient logic-level gate drive compatibility. The low threshold voltage characteristics facilitate direct interfacing with standard microcontroller outputs without additional level-shifting circuitry. Consider the thermal performance requirements relative to the mounting base temperature, as current and power ratings are significantly dependent on heatsinking effectiveness and ambient operating conditions.

Part Context

This device belongs to the Nexperia BUK9635 series of N-channel MOSFETs. It is manufactured using proprietary TrenchMOS technology, which distinguishes it from planar MOSFET designs by offering superior specific on-resistance and switching performance. The product line is specifically engineered to meet the stringent durability and longevity demands of modern automotive electronic control units and power distribution networks.