BUK964R2-55B/C

$0.75

Description：N-CHANNEL TRENCHMOS LOGIC LEVEL
Series：*
Mfr：NXP USA Inc.
Package：Bulk

SKU:78683e2fd580 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL TRENCHMOS LOGIC LEVEL
Series：*
Mfr：NXP USA Inc.
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BUK964R2-55B/C

Overview

The BUK964R2-55B/C is an N-channel TrenchMOS logic level field-effect transistor designed for high-efficiency switching applications. It features a maximum drain-source voltage of 55V and a continuous drain current of 170A at 25°C case temperature. The device exhibits a low on-state resistance of 2.2mΩ, ensuring minimal conduction losses. It is qualified to AEC-Q101 standards for automotive critical applications and supports a junction temperature range from -55°C to 175°C with a power dissipation capacity of 300W under case conditions.

Feature Summary

Automotive-grade qualification compliant with AEC-Q101 standards for reliability in critical applications
TrenchMOS technology enabling logic-level gate drive compatibility and low on-resistance
High thermal performance supporting operation up to 175°C junction temperature

Applications

Automotive power management systems
DC-DC converter circuits
Motor control applications

Procurement Notes

Verify the specific suffix (e.g., /C or ,118) against the manufacturer's official datasheet to confirm package type and reel specifications. Ensure the component meets the required AEC-Q101 grade if used in automotive contexts. Cross-reference the part number with the original equipment manufacturer's documentation to avoid counterfeit components.

Selection Notes

Select this component when high current handling and low conduction loss are required in space-constrained designs. The logic-level gate threshold simplifies driver circuit design compared to standard MOSFETs. Consider the thermal requirements and ensure adequate heat sinking to maintain performance within the specified junction temperature limits during continuous operation.

Part Context

This device belongs to the BUK96 series of N-channel TrenchMOS FETs from Nexperia/NXP. These components are engineered for robust performance in demanding environments, combining high current capability with efficient switching characteristics. The series is widely recognized for its reliability in both industrial and automotive sectors.