BUK964R2-55B,118

$3.73

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:024c7d530abe Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：95 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：10220 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK964R2-55B,118

Overview

The BUK964R2-55B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 3.5 mΩ at VGS=5V and ID=25A. Total power dissipation reaches 300 W at 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy ratings.

Feature Summary

Logic level gate drive compatibility for efficient control
Low conduction losses resulting from minimal on-state resistance
Qualified for automotive critical applications per AEC-Q101 standards
Operational suitability in thermally demanding environments up to 175 °C

Applications

12 V and 24 V load switching
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm the component status against the latest Nexperia product availability data before design finalization. Ensure thermal management designs account for the specified mounting base temperature dependencies. Cross-reference pinning information with the target PCB footprint to avoid connection errors during assembly.

Selection Notes

Select this component when low on-state resistance is critical for minimizing conduction losses in high-current applications. The logic level gate threshold allows direct driving from standard logic sources without additional gate drivers. Consider the 175 °C junction rating for designs requiring operation in elevated ambient temperatures or constrained thermal environments.

Part Context

This part belongs to the Nexperia BUK964 series of N-channel TrenchMOS logic level FETs. It is housed in the SOT404 (D2PAK) plastic surface-mounted package. The series is designed for robust performance in automotive and general power switching applications, emphasizing reliability and thermal stability under stress conditions.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original datasheet specifications.