BUK964R2-80E,118

$3.22

Description：MOSFET N-CH 80V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5b9a2a16b099 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 120A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：123 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：17130 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：349W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK964R2-80E,118

Overview

The BUK964R2-80E is an N-channel TrenchMOS logic level FET in a SOT404 (D2PAK) package. It features a drain-source voltage of 80 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device has a maximum total power dissipation of 349 W. Static characteristics include a typical RDSon of 3.4 mΩ at VGS = 5 V and ID = 25 A. Dynamic parameters show a total gate charge of 123 nC and a gate-drain charge of 37.5 nC. Thermal resistance from junction to mounting base is 0.43 K/W.

Feature Summary

AEC Q101 compliant for automotive applications
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with Vgst(th) rating greater than 0.5V at 175 °C

Applications

12V, 24V and 48V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target automotive application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values under actual operating conditions.

Selection Notes

Select this component when designing circuits requiring high current handling capabilities within an 80 V system. The low on-state resistance minimizes conduction losses during operation. Verify that the gate drive voltage aligns with the true logic level threshold requirements, particularly at elevated temperatures up to 175 °C. Consider the repetitive avalanche rating if the application involves inductive load switching.

Part Context

This part belongs to the BUK964 series of N-channel TrenchMOS logic level FETs manufactured by Nexperia. These devices utilize advanced trench technology to achieve low on-resistance and high current density. The series is designed specifically for high-performance automotive applications, offering robust reliability and thermal stability compared to standard MOSFETs.