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Product Detailed Parameters
- Description：MOSFET N-CH 40V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：7124 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：254W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK964R4-40B,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT404 (D2PAK) plastic package. Designed for automotive critical applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 3.64 mΩ at VGS=10V and 4.4 mΩ at VGS=5V. It supports a total power dissipation of 254 W and operates within a junction temperature range of -55 °C to 175 °C.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with logic-level compatibility. The D2PAK package offers efficient thermal management for high-current applications. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on) performance. Consider the 175 °C junction rating for high-temperature operational environments typical in automotive under-hood modules.
Part Context
This part belongs to Nexperia's BUK9 series of TrenchMOS logic level FETs. These devices are engineered to provide high efficiency through minimized conduction and switching losses. The series is widely utilized in power management solutions where space constraints and thermal performance are critical design factors.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, package type, and thermal characteristics to ensure functional equivalence without compromising system reliability.
