ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：4.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：65 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：9710 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：234W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Download product information
Overview
The BUK964R8-60E,118 is an N-channel TrenchMOS logic level MOSFET manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology and is housed in a D2PAK (SOT404) surface-mount package. The device is qualified to the AEC-Q101 standard for automotive applications. Key electrical parameters include a drain-source voltage (VDS) of 60 V, a continuous drain current (ID) of 100 A at 25 °C mounting base temperature, and a total power dissipation (Ptot) of 234 W. The typical on-state resistance (RDSon) is 3.78 mΩ at VGS = 5 V and ID = 25 A. The gate-source threshold voltage (VGS(th)) is rated greater than 0.5 V at 175 °C.
Feature Summary
- AEC-Q101 compliant for high-performance automotive applications
- Repetitive avalanche rated for rugged operation
- Suitable for thermally demanding environments with a 175 °C junction temperature rating
- True logic level gate drive capability
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring low conduction losses and robust avalanche handling in automotive environments. The true logic level gate allows direct drive from standard logic sources without additional level shifting. Ensure thermal management strategies account for the 175 °C maximum junction temperature rating to maintain reliability under high load conditions.
Part Context
This part belongs to the Nexperia BUK964 series of N-channel TrenchMOS logic level FETs. These devices are engineered for high-efficiency power switching using advanced trench gate technology. The series is specifically designed to meet the rigorous quality and reliability standards required for modern automotive electronics, offering a balance of low on-resistance and high current handling capabilities.
Replacement Considerations
Check pinout compatibility and RDSon specifications against alternatives. Verify that substitute components also meet AEC-Q101 requirements if used in automotive contexts. Ensure the replacement package matches the SOT404 footprint for board integration.
