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Product Detailed Parameters
- Description：MOSFET N-CH 60V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：5.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：48 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：6900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：182W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK966R5-60E,118 is an N-channel TrenchMOS logic level MOSFET manufactured by Nexperia. It features a 60 V drain-source voltage (Vdss) and supports a continuous drain current of 75 A at case temperature. The device exhibits a maximum on-resistance of 5.9 mΩ at 25 A with a 10 V gate drive. Packaged in a D2PAK (TO-263-3) surface-mount housing, it handles up to 182 W power dissipation. Operating temperatures range from -55 °C to +175 °C junction temperature. It meets AEC-Q101 automotive qualification standards.
Feature Summary
- Automotive qualified to AEC-Q101 standard for high-performance applications
- Logic level gate operation suitable for low-voltage control systems
- High thermal performance rated for 175 °C junction temperature
Applications
- 12 V automotive systems
- Motor, lamp, and solenoid control
- Transmission control units
- Ultra-high performance power switching
Procurement Notes
Verify the specific suffix '118' corresponds to the required tape-and-reel packaging configuration. Confirm that the D2PAK footprint matches the target PCB design. Ensure the component meets AEC-Q101 requirements if deployed in automotive environments. Cross-reference datasheet electrical limits against system operating conditions to prevent thermal overstress.
Selection Notes
Select this component when a 60 V N-channel MOSFET with high current capability is required. The 5.9 mΩ on-resistance minimizes conduction losses at 25 A. The logic-level gate threshold allows direct interfacing with standard microcontrollers or drivers. The D2PAK package provides robust thermal management for high-power density designs.
Part Context
This part belongs to the BUK966 series of N-channel TrenchMOS FETs. It utilizes Nexperia's trench technology to achieve low on-resistance within a compact surface-mount package. The series is designed for demanding power switching applications requiring high reliability and thermal stability.
Replacement Considerations
Direct substitutes include other BUK966 series variants such as BUK9Y6R0-60E or BUK7E2R6-60E, provided pinout and package compatibility are verified. Always validate replacement parts against original electrical specifications and thermal characteristics.
