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The BUK969R0-60E,118 is an N-channel TrenchMOS logic level MOSFET in a D2PAK (SOT404) package. It features a drain-source voltage of 60 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 9 mΩ at VGS = 5 V and ID = 20 A. Total power dissipation reaches 137 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
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Select this component when low gate drive voltage compatibility is required alongside high current handling. The logic level gate ensures effective switching with standard 5 V drivers. Ensure thermal management design accommodates the 137 W dissipation limit at the mounting base. Verify that the 60 V rating aligns with the system's peak transient voltages.
This part belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology to minimize on-state resistance. The SOT404 package provides a balance between power handling and surface-mount convenience. It is designed specifically for automotive reliability standards, distinguishing it from general-purpose industrial transistors.
Check pinout compatibility with existing PCB footprints. Compare RDS(on) and Qg values against potential substitutes to ensure equivalent switching losses. Confirm that any replacement also meets AEC-Q101 requirements if used in automotive contexts.