BUK969R3-100E,118

Overview

The BUK969R3-100E,118 is an N-channel TrenchMOS logic level MOSFET in a SOT404 (D2PAK) package. It features a drain-source voltage of 100 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The typical on-state resistance is 7.49 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 263 W at 25 °C. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• AEC Q101 compliant for high performance automotive applications
• Repetitive avalanche rated for robust operation
• Suitable for thermally demanding environments with a 175 °C rating
• True logic level gate with threshold voltage greater than 0.5V at 175 °C

Applications

• 12V, 24V and 48V Automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for automotive circuits requiring true logic level drive compatibility at elevated temperatures. The low on-state resistance minimizes conduction losses in high-current paths. Ensure thermal management design accounts for the specified junction-to-mounting base thermal resistance to maintain reliability within the 175 °C limit during continuous operation.

Part Context

This part belongs to Nexperia's BUK9 series of N-channel TrenchMOS logic level FETs. These devices utilize advanced trench technology to achieve low on-resistance and fast switching speeds. The SOT404 package provides efficient heat dissipation through the exposed drain pad, making it suitable for surface-mount applications in power electronics.

Replacement Considerations

Check pinout compatibility and electrical parameters against alternatives. Verify that substitute components meet the same AEC-Q101 qualification standards and support the required 175 °C operating temperature range for automotive use.