BUK98150-55/CUF

$0.35

Description：MOSFET N-CH 55V 5.5A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:12cdc780eb41 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 5.5A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：150mOhm @ 5A, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：330 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：8.3W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

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BUK98150-55/CUF

Overview

The BUK98150-55/CUF is an N-channel TrenchMOS logic level FET designed for automotive and general-purpose power switching. It operates with a drain-source voltage of 55 V and a continuous drain current of 5.5 A at 25 °C. The device features a maximum on-state resistance of 150 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 8.3 W at 25 °C case temperature. It complies with AEC-Q101 standards, ensuring reliability in critical applications.

Feature Summary

AEC-Q101 compliant for automotive critical applications
Integrated protection diodes provide electrostatic robustness
Low conduction losses due to low on-state resistance

Applications

Automotive power switching
General purpose power switching

Procurement Notes

Verify the specific ordering suffix /CUF against the manufacturer's latest documentation to confirm package and marking details. Confirm that the component meets the required AEC-Q101 qualification status for your specific design implementation. Ensure thermal management aligns with the specified junction-to-solder point thermal resistance values provided in the datasheet.

Selection Notes

Select this component when a logic-level N-channel MOSFET is required for 55 V systems. The low gate threshold voltage allows efficient driving from standard logic levels. Consider the SOT223 package constraints for heat dissipation. Verify that the peak drain current and avalanche energy ratings meet the transient requirements of the target circuit.

Part Context

This part belongs to the Nexperia (formerly NXP) TrenchMOS family, utilizing advanced trench technology for improved performance. The BUK98150 series is specifically engineered for high-efficiency power switching. The device integrates body diode characteristics suitable for synchronous rectification or inductive load switching applications within the defined voltage and current limits.