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Product Detailed Parameters
- Description：MOSFET N-CH 55V 5.5A SOT223
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：137mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.3 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：320 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
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Overview
The BUK98150-55A/CUF is an N-channel TrenchMOS logic level FET designed for automotive and general power switching. It features a 55 V drain-source voltage rating and supports a continuous drain current of 5.5 A at 25 °C solder point temperature. The device exhibits low on-state resistance, with typical values of 137 mΩ at 10 V gate drive and 150 mΩ at 5 V gate drive when conducting 5 A. Total power dissipation reaches 8 W under specified thermal conditions. The component operates within a junction temperature range of -55 °C to 150 °C and includes an integrated source-drain diode.
Feature Summary
- Utilizes TrenchMOS technology to achieve low conduction losses through minimized on-state resistance.
- Qualified to AEC-Q101 standards for reliability in critical automotive applications.
- Optimized for direct interface with logic level gate drive sources.
Applications
- Switching 12 V and 24 V loads
- Automotive power management circuits
- General purpose power switching
- Control of motors, lamps, and solenoids
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package and marking specifications. Confirm that the intended application environment remains within the absolute maximum ratings defined in the product data sheet. Ensure design safeguards are implemented to prevent exposure to stress conditions exceeding the limiting values provided in the official Nexperia specifications.
Selection Notes
Select this component for designs requiring robust performance in automotive environments where AEC-Q101 qualification is mandatory. The logic level gate drive capability allows for efficient control using standard microcontroller outputs without additional driver stages. Consider the thermal resistance characteristics and available heatsinking options to maintain junction temperatures within safe operating limits during high-current operation.
Part Context
This part belongs to the BUK98150 series from Nexperia, utilizing SC-73 (SOT223) surface-mounted packaging. The series employs TrenchMOS technology to enhance efficiency in power switching applications. The specific model integrates an N-channel enhancement mode field-effect transistor structure optimized for low on-resistance and high reliability in demanding electronic systems.
Replacement Considerations
Publicly confirmed substitute part number: PJW4N06A-AU_R2_000A1 by Panjit International Inc.
FAQ
What is the maximum non-repetitive drain-source avalanche energy?
The device can withstand a non-repetitive drain-source avalanche energy of 22 mJ under specified test conditions.
How does the gate-source threshold voltage vary with temperature?
The gate-source threshold voltage decreases as the junction temperature increases, ranging from a maximum of 2.3 V at -55 °C to lower values at elevated temperatures.
