BUK98180-100A/CU115

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:30b7d3820265 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：173mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：619 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

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BUK98180-100A/CU115

Overview

The BUK98180-100A/CU115 is an N-channel TrenchMOS logic level FET designed for automotive critical applications. It features a 100 V drain-source voltage rating and supports a continuous drain current of 4.6 A at a solder point temperature of 25 °C. The device exhibits low on-state resistance, typically 153 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 8 W under standard conditions. The component utilizes the SC-73 (SOT223) plastic surface-mounted package with four leads.

Feature Summary

Logic level gate drive compatibility
Automotive qualification compliant with Q101 standards
Low conduction losses via minimized on-state resistance

Applications

12 V, 24 V and 42 V load switching
Automotive power switching circuits
General purpose power control
Motor, lamp and solenoid drives

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package and marking specifications. Confirm that the requested variant matches the required automotive grade and thermal characteristics defined in the product data sheet prior to finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring logic-level gate drive operation from standard microcontroller outputs. Ensure the application operates within the specified junction temperature range and respects the absolute maximum ratings for avalanche energy and peak drain current to maintain reliability.

Part Context

This part belongs to Nexperia's BUK98 series of N-channel enhancement mode Field-Effect Transistors. These devices utilize TrenchMOS technology to achieve high performance in compact surface-mount packages. The series is engineered specifically for robustness in demanding automotive environments while maintaining efficiency in general-purpose power switching tasks.