BUK98180-100A/CUX

$0.44

Description：MOSFET N-CH 100V 4.6A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:af0053e76db5 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 4.6A SOT223
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：173mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：619 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

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BUK98180-100A/CUX

Overview

The BUK98180-100A/CUX is an N-channel TrenchMOS logic level FET designed for automotive and general-purpose power switching. It features a drain-source voltage of 100 V and a continuous drain current of 4.6 A at 25 °C solder point temperature. The device exhibits low on-state resistance, typically 153 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation is rated at 8 W. It operates within a junction temperature range of -55 °C to 150 °C and utilizes the SOT223 (SC-73) plastic surface-mounted package.

Feature Summary

Low conduction losses due to low on-state resistance
Q101 compliant for automotive critical applications
Suitable for logic level gate drive sources

Applications

12 V, 24 V and 42 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package variant and marking code accuracy. Ensure the component meets the required AEC-Q101 qualification standards for the intended automotive application environment. Cross-reference the datasheet revision date with the latest product status information available from Nexperia sales offices before initiating design implementation.

Selection Notes

Select this component for designs requiring logic-level gate drive compatibility with low conduction losses. Verify that the thermal management strategy accommodates the specified total power dissipation and thermal resistance values under expected operating conditions. Confirm suitability for the target voltage domain and load type, ensuring peak current requirements remain within the safe operating area limits defined in the datasheet.

Part Context

This part belongs to the Nexperia BUK98 series of N-channel TrenchMOS logic level FETs. These devices are engineered using TrenchMOS technology to provide enhanced performance in plastic packages. The series is specifically qualified to AEC standards, targeting reliability in automotive critical applications while maintaining efficiency in general-purpose power switching environments.