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The BUK9875-100A is an N-channel TrenchMOS logic level FET designed for automotive and general-purpose power switching. It features a drain-source voltage of 100 V and a continuous drain current of 7 A at 25 °C. The device exhibits a maximum on-state resistance of 72 mΩ at VGS = 10 V. Total power dissipation reaches 8 W at a solder point temperature of 25 °C. The component operates within a junction temperature range of -55 °C to +150 °C and utilizes a SOT223 (SC-73) surface-mounted package.
Verify the manufacturer designation as Nexperia rather than NXP USA Inc., as the official datasheet identifies Nexperia B.V. as the producer. Confirm the specific ordering suffix matches the required package variant, such as /CU for the standard SC-73 plastic surface-mounted package. Ensure the component meets Q101 compliance requirements if intended for automotive critical applications.
Select this component when a logic-level N-channel enhancement mode FET is required for driving 12 V, 24 V, or 42 V loads. The device supports direct connection to logic gate drivers due to its low threshold characteristics. Consider the thermal resistance from junction to solder point of 15 K/W for heat sink design in high-current scenarios.
This part belongs to the BUK9875 series of N-channel TrenchMOS logic level FETs manufactured by Nexperia. The series utilizes TrenchMOS technology to achieve low on-state resistance. The BUK9875-100A specifically targets automotive critical applications while maintaining suitability for general-purpose power switching environments.
BUK9875-100A/CU serves as the equivalent ordering variant with the same electrical specifications and package outline.