SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BUK9880-55A/CUX is an N-channel TrenchMOS logic level FET in a SOT223 package. It features a drain-source voltage of 55 V and a continuous drain current of 7 A at 25 °C solder point temperature. The device exhibits a typical on-state resistance of 68 mΩ at VGS = 5 V and ID = 8 A. Total power dissipation is rated at 8 W. Thermal resistance from junction to solder point is 15 K/W. Gate-source threshold voltage ranges from 1 V to 2.3 V. Avalanche energy capability is 36 mJ.
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component status remains active or qualified for new designs. Check for any recent product change notices regarding marking codes or internal die revisions. Ensure the supplier provides valid traceability documentation for automotive grade compliance.
Select this component for circuits requiring logic level gate compatibility with low RDS(on). Consider the thermal resistance characteristics when designing heat sinking solutions. Verify that the operating junction temperature stays within the specified -55 °C to 150 °C range. Evaluate the avalanche ruggedness if the application involves inductive load switching without clamping.
This part belongs to Nexperia's TrenchMOS family, utilizing advanced trench gate technology for enhanced performance. The SOT223 package provides a plastic surface-mounted solution with increased heatsink capabilities. It is designed specifically for automotive applications while maintaining general-purpose utility.
BUK9880-55A