ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 65V 75A D2PAK-7
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：65 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：59.6 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：4170 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：171W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK-7
- Package / Case：TO-263-7, D2PAK (6 Leads + Tab)
Download product information
Overview
The BUK9C10-65BIT is an N-channel enhancement mode field-effect power transistor manufactured using Nexperia High-Performance TrenchPLUS technology. It features very low on-state resistance, integrated current sensing transistors, and over temperature protection diodes. The device operates in a SOT427 (D2PAK) package with seven leads. Key electrical characteristics include a drain-source breakdown voltage of 65 V, a maximum continuous drain current of 75 A at 25 °C mounting base temperature, and a total power dissipation of 171 W. The typical drain-source on-state resistance is 8.5 mΩ at VGS = 5V and ID = 25A.
Feature Summary
- Compliant with AEC-Q101 automotive standards for critical applications.
- Features integrated current sensing transistors for responsive monitoring.
- Includes over temperature protection diodes for thermal management.
Applications
- Lamp switching
- Motor drive systems
- Power distribution
- Solenoid drivers
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable automotive qualification standards relevant to your design environment. Ensure compatibility with the SOT427 footprint during PCB layout. Check for any recent product change notices regarding assembly sites or material composition updates before finalizing procurement orders.
Selection Notes
Select this component for designs requiring high current handling capabilities within a compact surface-mount form factor. The logic level gate drive suitability allows for direct interfacing with standard control logic. Consider the integrated thermal and current sensing features when designing protection circuits. Evaluate the thermal resistance parameters against your system's heat dissipation requirements to ensure reliable operation under load.
Part Context
This part belongs to the BUK9C series of N-channel TrenchPLUS logic level FETs from Nexperia. These devices are designed for robust performance in demanding power switching environments. The series utilizes advanced trench technology to minimize conduction losses while maintaining high reliability. The D2PAK package provides efficient thermal transfer to the printed circuit board.
Replacement Considerations
Direct substitutes may include other N-channel MOSFETs with similar voltage ratings and current capabilities in the D2PAK package. Verify pinout compatibility, specifically the placement of the current sense and Kelvin source pins. Ensure that the replacement device meets the same AEC-Q101 qualification if used in automotive contexts.
