ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V D2PAK-7
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK-7
- Package / Case：TO-263-7, D2PAK (6 Leads + Tab)
Download product information
Overview
The BUK9C2R2-60EJ is an N-channel Power MOSFET manufactured by NXP Semiconductors. It features a drain-source voltage rating of 60V and a continuous drain current capacity of 190A. The device utilizes the Super Junction technology to achieve low on-state resistance, specifically Rds(on) of 2.2mΩ at Vgs=10V. It is housed in a TO-263-7 (D²Pak) surface-mount package designed for high thermal efficiency and robust performance in power switching applications.
Feature Summary
- Super Junction technology enables low specific on-resistance for improved conduction efficiency.
- High current handling capability supports demanding power delivery requirements.
- Surface-mount D²Pak package provides reliable thermal dissipation and mechanical stability.
Applications
- DC-DC converter modules
- Motor control circuits
- Power supply output stages
Procurement Notes
Verify the manufacturer marking and date code against official NXP documentation to ensure authenticity. Confirm that the component meets RoHS3 compliance standards as specified in the datasheet. Check for any specific ordering suffixes that may indicate tape-and-reel packaging or environmental variations. Ensure storage conditions align with moisture sensitivity level requirements prior to assembly.
Selection Notes
Select this component when a 60V N-channel MOSFET with high current capacity is required. The low Rds(on) makes it suitable for minimizing conduction losses in efficient power designs. Consider the TO-263-7 package constraints for PCB layout and thermal management. Evaluate gate charge parameters if switching frequency is a critical design factor.
Part Context
This part belongs to NXP's BUK9C series of Super Junction MOSFETs. These devices are engineered for automotive and industrial applications requiring high reliability and efficiency. The series offers various voltage and current ratings within the same package family to simplify inventory management across different product lines.
Replacement Considerations
Check for direct cross-reference parts from NXP or other manufacturers offering identical pinout and electrical specifications. Verify that any substitute maintains the same 60V rating and comparable Rds(on) values. Ensure the replacement package matches the TO-263-7 footprint for board compatibility.
