BUK9E08-55B,127

Description：MOSFET N-CH 55V 75A I2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:95c7a2023a4a Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A I2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：5280 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：203W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

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BUK9E08-55B,127

Overview

The BUK9E08-55B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing Nexperia's TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 6.27 mΩ at VGS = 10 V and 7.1 mΩ at VGS = 5 V. Designed for automotive critical applications, it supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 352 mJ.

Feature Summary

Logic level gate drive compatibility
Automotive qualification compliance
High thermal stability rating

Applications

12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure design margins account for the absolute maximum ratings defined in the product data sheet to prevent permanent damage during operation.

Selection Notes

Select this component for designs requiring low conduction losses and robust performance in thermally demanding environments. The logic level gate drive capability allows direct interfacing with standard logic sources. Verify that the application current does not exceed the package-limited continuous drain current of 75 A under expected operating conditions.

Part Context

This device belongs to the BUK9E series of N-channel TrenchMOS logic level FETs manufactured by Nexperia. It is housed in an I2PAK (SOT226) plastic single-ended package. The product is designed and qualified to appropriate AEC standards for use in automotive critical applications, distinguishing it from general-purpose industrial transistors.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original datasheet requirements.