BUK9E1R9-40E,127

$0.98

Description：MOSFET N-CH 40V I2PAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tube

SKU:562b5e053554 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V I2PAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

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BUK9E1R9-40E,127

Overview

The BUK9E1R9-40E,127 is an N-channel silicon MOSFET from Nexperia, housed in a TO-262-3 (I2PAK) surface-mount package. It features a drain-source voltage rating of 40 V and a continuous drain current capacity of 120 A at the maximum junction temperature. The device exhibits a typical on-state resistance of 1.9 mΩ, ensuring low conduction losses in high-current applications.

Feature Summary

High current handling capability with a 120 A continuous drain current rating
Low on-state resistance for efficient power management
Robust avalanche ruggedness for reliable operation under transient conditions

Applications

DC-DC converter modules
Motor control circuits
Power distribution units

Procurement Notes

Verify the specific ordering code suffix to confirm the tape and reel packaging configuration. Confirm RoHS compliance status and REACH SVHC declarations against current regulatory requirements before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high current density in a standard I2PAK footprint. Ensure thermal management solutions account for the power dissipation characteristics at the intended operating junction temperature and ambient conditions.

Part Context

This part belongs to the Nexperia BUK9 series of single N-channel MOSFETs designed for general-purpose power switching. The I2PAK package provides a balance between thermal performance and mounting flexibility for industrial and consumer electronics applications.

Replacement Considerations

Direct substitutes include BUK9E2R3-40E,127 and BUK7E1R9-40E,127. Verify pinout compatibility and electrical parameter margins when cross-referencing these alternatives.