BUK9E2R3-40E,127

$1.05

Description：MOSFET N-CH 40V 120A I2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:fd4216367d43 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 120A I2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：87.8 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：13.16 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：293W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

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BUK9E2R3-40E,127

Overview

The BUK9E2R3-40E is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an I2PAK (SOT226) plastic single-ended package. Designed for high-performance automotive applications, it meets AEC-Q101 standards and supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 120 A at 25 °C mounting base temperature, and a maximum total power dissipation of 293 W. The device features a typical on-state resistance of 2.1 mΩ at VGS = 5 V and ID = 25 A, with a gate-source threshold voltage greater than 0.5 V at 175 °C.

Feature Summary

AEC-Q101 compliant for automotive reliability
Repetitive avalanche rated for rugged operation
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with low threshold voltage at elevated temperatures

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's latest documentation before finalizing procurement. Confirm that the component status remains active and check for any recent product change notifications or end-of-life declarations. Ensure compliance with relevant environmental directives such as RoHS and REACH requirements applicable to your region.

Selection Notes

Select this component when a robust N-channel MOSFET with logic-level gate drive capability is required for automotive environments. The low on-state resistance and high current handling make it suitable for efficient power switching. Consider the thermal management capabilities provided by the I2PAK package and its ability to operate reliably at high junction temperatures.

Part Context

This part belongs to Nexperia's portfolio of discrete, logic, and PowerMOS semiconductors. It is designed for use in automotive, industrial, computing, consumer, and wearable application markets. The product utilizes TrenchMOS technology to deliver high performance and efficiency in a compact surface-mount package.

Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Cross-reference specifications such as voltage ratings, current handling, and package dimensions to ensure compatibility with existing designs.