BUK9E3R2-40B,127

Overview

The BUK9E3R2-40B,127 is an N-channel enhancement mode TrenchMOS logic level Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes advanced TrenchMOS technology to achieve low on-state resistance and high current handling capabilities within a plastic surface-mount package. Designed for automotive critical applications, the device complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage (Vds) of 40 V, a continuous drain current (Id) of 80 A at case temperature, and a maximum on-resistance (Rds(on)) of 3.2 mΩ. The component supports a junction temperature up to 175 °C and features a TO-263 (D2PAK) package configuration.

Feature Summary

• Logic level gate drive compatibility enables efficient control using standard logic signals.
• Low conduction losses are achieved through minimized on-state resistance inherent to TrenchMOS architecture.
• Automotive qualification ensures reliability in demanding environments under AEC-Q101 standards.
• High thermal performance allows operation in thermally constrained applications with extended temperature ratings.

Applications

• 12 V load switching in automotive systems
• General purpose power switching circuits
• Motor, lamp, and solenoid control

Procurement Notes

Verify the specific ordering code suffix against official Nexperia documentation to confirm package variant and tape-and-reel specifications. Ensure compliance with RoHS directives and REACH regulations relevant to your region. Confirm that the AEC-Q101 qualification status meets the requirements for your target automotive application before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring low Rds(on) for high efficiency at 40 V. The logic level gate threshold simplifies driver design compared to standard MOSFETs. Consider the TO-263 package's thermal dissipation capabilities relative to your PCB layout and heat sinking constraints to ensure stable operation at high currents.

Part Context

This part belongs to the BUK9E series of N-channel TrenchMOS FETs from Nexperia. The series is characterized by optimized trade-offs between on-resistance and gate charge, targeting automotive and industrial power management. The 'BUK' prefix denotes Nexperia's automotive-grade discrete semiconductor lineup.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics carefully when considering generic equivalents to ensure functional parity in automotive safety-critical contexts.