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Product Detailed Parameters
- Description：MOSFET N-CH 80V 120A I2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：4.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：123 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：17.13 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：349W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK9E4R4-80E,127 is an N-channel enhancement mode MOSFET from Nexperia, utilizing TrenchMOS technology. It features a drain-source voltage (Vdss) of 80 V and a maximum on-state resistance (Rds_on) of 4.4 mΩ at Vgs = 10 V. The device supports a continuous drain current (Id) of 150 A at case temperature. It operates within a junction temperature range of -55 °C to +175 °C and is housed in an LFPAK56 (Power-SO8) package.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards for reliability.
- Capable of handling thermally demanding environments due to a 175 °C operating rating.
- Designed as a true logic level gate device with low threshold voltage characteristics.
Applications
- 12 V, 24 V, and 48 V automotive systems
- Motor, lamp, and solenoid control circuits
- Transmission control modules
- Ultra-high performance power switching applications
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and reel specifications. Ensure that the selected component matches the required automotive grade and thermal performance parameters for the intended application environment before finalizing procurement.
Selection Notes
Select this component for high-current automotive applications requiring low conduction losses. The combination of 80 V blocking capability and 4.4 mΩ on-resistance makes it suitable for efficient power management in 12 V, 24 V, and 48 V systems where space constraints favor the LFPAK56 package.
Part Context
This part belongs to the Nexperia BUK9E series of N-channel MOSFETs. These devices are engineered using advanced TrenchMOS technology to deliver superior performance in terms of on-resistance and switching efficiency. The series is specifically targeted at automotive markets, ensuring robustness under harsh electrical and thermal conditions.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-referencing requires matching Vdss, Rds_on, Id, package type, and AEC-Q101 compliance to ensure functional equivalence in automotive designs.
