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The Nexperia BUK9J0R9-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 low ohmic superjunction technology within an enhanced LFPAK56E package. It features a drain-source voltage of 40 V and a typical on-state resistance of 0.82 mΩ at 25 °C. The device supports a continuous drain current of 220 A and total power dissipation of 500 W. Gate-source voltage limits are -10 V to 16 V, with a junction temperature range from -55 °C to 175 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape configuration. Ensure the component matches the exact part number BUK9J0R9-40H for electrical specifications. Confirm RoHS compliance and REACH SVHC status through the manufacturer's latest product data sheet before integration into production designs.
Select this component for applications requiring high current handling and low conduction losses in automotive environments. The logic level gate drive compatibility allows for efficient control with standard 4.5 V or 10 V drivers. Consider the LFPAK56E package for its superior thermal management and mechanical robustness in space-constrained PCB layouts.
This device belongs to Nexperia's automotive-grade MOSFET portfolio designed for high-efficiency power switching. It leverages advanced superjunction technology to achieve industry-leading figures of merit within the LFPAK family. The part is engineered to meet stringent automotive reliability standards while providing compact form factors for modern vehicle electronics.
Direct substitutes include other Nexperia parts in the BUK9J series with similar voltage and resistance ratings, such as BUK9J1R4-40H. Verify pinout compatibility and thermal characteristics when replacing components to ensure system performance remains within specified limits.
The maximum junction temperature (Tj) rating is 175 °C, suitable for thermally demanding automotive environments.
Yes, the LFPAK Gull Wing lead design allows for visual AOI soldering inspection without the need for expensive x-ray equipment.
The device uses Trench 9 low ohmic superjunction technology, which reduces cell pitch to enhance power density and efficiency.