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The Nexperia BUK9K12-60EX is a dual N-channel logic level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 60 V and a continuous drain current of 35 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 9.5 mΩ at VGS = 5 V and ID = 15 A, with a maximum rating of 11.5 mΩ. Total power dissipation reaches 68 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging type and reel specifications. Ensure the requested part number matches the exact marking code '91260E' found on the physical components. Confirm compliance requirements such as RoHS status directly from the manufacturer's latest product data sheet before finalizing procurement orders.
Select this component when designing circuits requiring dual N-channel isolation within a compact footprint. The low on-state resistance minimizes conduction losses in power switching applications. Verify that the gate drive voltage aligns with the logic level characteristics to ensure optimal performance at elevated junction temperatures up to 175 °C.
This device belongs to the Nexperia BUK9K series of TrenchMOS logic level MOSFETs. It is specifically engineered for automotive environments where thermal stability and reliability are critical. The LFPAK56D package provides enhanced thermal performance compared to standard plastic packages, supporting the high current ratings required in modern vehicle electrical architectures.
Consult official Nexperia substitution guides for verified alternatives. Cross-referencing requires matching package type, voltage ratings, and current capabilities.