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The Nexperia BUK9K13-40HX is a dual N-channel logic level MOSFET utilizing Trench 9 superjunction technology. It features a 40 V drain-source voltage rating and a continuous drain current of 42 A at 25 °C mounting base temperature. The device offers a typical on-state resistance of 13 mΩ at VGS = 10 V and 14.1 mΩ at VGS = 4.5 V. Packaged in an LFPAK56D (SOT1205) surface-mount housing, it supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific suffix 'HX' against the manufacturer's official ordering information to confirm packaging details such as reel size or tape specifications. Ensure the component meets the required RoHS and REACH compliance standards for your target market. Cross-reference the marking code '91340HK' with incoming inspection protocols to validate authenticity and traceability during quality assurance processes.
Select this component for designs requiring dual-channel integration within a compact footprint. The logic-level gate drive capability allows direct interfacing with standard microcontrollers without additional level shifting. Evaluate thermal management requirements based on the specified power dissipation limits and ensure PCB layout supports the LFPAK56D heat dissipation characteristics effectively.
This device belongs to the Nexperia BUK9K13 series of automotive-grade MOSFETs. It utilizes advanced TrenchMOS technology to achieve superior performance metrics compared to previous generations. The LFPAK56D package is designed for high-current applications where thermal efficiency and mechanical stability are critical for long-term reliability in demanding environments.
BUK9V13-40HX