BUK9K13-60EX

Overview

The BUK9K13-60EX is a dual N-channel logic level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 60 V and a continuous drain current of 40 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 12.5 mΩ at VGS = 5 V and ID = 10 A. Total power dissipation reaches 64 W under specified conditions, with a junction temperature range spanning from -55 °C to +175 °C.

Feature Summary

• Dual MOSFET configuration in a single surface-mounted package
• Qualified to AEC-Q101 standard for automotive applications
• Repetitive avalanche rated for ruggedness
• True logic level gate operation with low threshold voltage

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the component meets the required RoHS and REACH compliance standards for your target market. Ensure the selected variant matches the exact pinning and marking codes defined in the product data sheet to prevent integration errors during assembly.

Selection Notes

Select this component for designs requiring dual channel isolation within a compact footprint. The low gate charge and fast switching characteristics support efficient power management in high-frequency circuits. Consider the thermal resistance values when designing heat dissipation strategies for environments approaching the maximum operating temperature limits.

Part Context

This device belongs to Nexperia's TrenchMOS family, designed specifically for high-performance automotive electronics. The LFPAK56D package provides enhanced thermal performance compared to traditional plastic packages, allowing for higher current handling capabilities while maintaining a small board area suitable for dense PCB layouts.

Replacement Considerations

BUK9K13-60E

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum DC gate-source voltage is ±10 V, while the pulsed rating extends to ±15 V.

Is the device suitable for high-temperature environments?

Yes, the MOSFET is rated for a maximum junction temperature of 175 °C, making it suitable for thermally demanding applications.

How is the gate threshold voltage affected by temperature?

The gate-source threshold voltage decreases as temperature increases, dropping to a minimum of 0.5 V at 175 °C.