BUK9K17-60E/1X

Overview

The Nexperia BUK9K17-60E is a dual N-channel logic level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a 60 V drain-source voltage rating and a continuous drain current of 26 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 14 mΩ at VGS = 5 V and ID = 10 A, with a maximum of 17 mΩ. Total power dissipation reaches 53 W under specified conditions. Qualified to AEC-Q101 standards, it supports junction temperatures up to 175 °C.

Feature Summary

• Dual MOSFET configuration in a single surface-mounted package
• Qualified to AEC-Q101 automotive standards for high performance applications
• Repetitive avalanche rated for rugged operation
• True logic level gate enabling drive from standard logic voltages

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the component status remains active and matches the required AEC-Q101 qualification level for your intended application environment before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel configuration is required in a compact LFPAK56D footprint. Ensure the design accommodates the thermal resistance characteristics and that the gate drive voltage meets the logic level requirements for optimal on-state resistance performance at the expected operating junction temperatures.

Part Context

This part belongs to the Nexperia BUK9K series of dual logic level MOSFETs. These devices are designed for automotive and industrial environments requiring robust power switching capabilities. The LFPAK56D package provides efficient thermal management through a large exposed pad connected to the drains.

Replacement Considerations

BUK9K17-60EX