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The BUK9K17-60EX is a dual N-channel logic level MOSFET manufactured by Nexperia USA Inc. utilizing TrenchMOS technology in an LFPAK56D (SOT1205) surface-mount package. It features a drain-source voltage of 60 V and a continuous drain current of 26 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 14 mΩ at VGS = 5 V and ID = 10 A, with a maximum of 17 mΩ. Total power dissipation reaches 53 W at 25 °C. Key dynamic parameters include a total gate charge of 16.5 nC and a turn-off delay time of 23 ns. It operates within a junction temperature range of -55 °C to +175 °C.
Verify the specific ordering suffix 'X' against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the LFPAK56D (SOT1205) package outline and marking code '91760E'. Confirm compliance with RoHS directives and REACH regulations prior to integration. Cross-reference the datasheet revision date to ensure the latest electrical characteristics are applied during design validation.
Select this component when a dual N-channel solution is required for 60 V automotive circuits. The low on-state resistance supports efficient power switching in motor and solenoid drivers. Verify that the thermal management strategy accommodates the 53 W power dissipation limit at the intended mounting base temperature. Ensure the gate drive voltage meets the logic level requirements for full enhancement at operating temperatures up to 175 °C.
This part belongs to the Nexperia BUK9K series of dual logic level MOSFETs. It shares the LFPAK56D package form factor with other variants like the BUK9K13-60E and BUK9K29-100E. These devices utilize TrenchMOS technology to achieve low on-resistance and fast switching speeds suitable for automotive power distribution and control applications requiring compact footprints.
Public confirmed substitute part numbers: None identified in verified source material.
The maximum junction temperature (Tj) is 175 °C.
Yes, it is designed and qualified to the AEC Q101 standard for high-performance automotive applications.
The gate-source threshold voltage (VGS(th)) is rated at greater than 0.5 V at a junction temperature of 175 °C.