BUK9K20-80EX

Overview

The Nexperia BUK9K20-80EX is a dual N-channel logic level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features an 80 V drain-source voltage rating and a maximum continuous drain current of 23 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 14.2 mΩ at VGS = 5 V and ID = 10 A, with a total gate charge of 25.5 nC. Designed for automotive environments, it supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Dual MOSFET configuration in a single LFPAK56D package
• AEC-Q101 qualified for high performance automotive applications
• True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
• Repetitive avalanche rated for robust switching performance

Applications

• 12 V, 24 V and 48 V automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the required AEC-Q101 qualification status for your target application environment. Cross-reference the marking code '92080E' with the datasheet to authenticate the physical device upon receipt.

Selection Notes

Select this component when a compact dual N-channel solution is required for automotive power management. The LFPAK56D package offers efficient thermal dissipation suitable for thermally demanding environments. Consider the 175 °C junction temperature rating and low on-state resistance for applications requiring high efficiency and reliability under varying load conditions.

Part Context

This part belongs to Nexperia's BUK9K series of dual logic level MOSFETs. These devices are engineered using TrenchMOS technology to provide enhanced power density and switching performance. The series is specifically designed to meet the rigorous demands of modern automotive electronics, offering a balance of low conduction losses and robust ruggedness.

Replacement Considerations

Direct replacements must match the LFPAK56D footprint and electrical characteristics. Verify that alternative dual N-channel MOSFETs maintain comparable RDS(on), VGS(th), and avalanche energy ratings. Ensure any substitute also holds AEC-Q101 qualification if used in automotive contexts.