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The Nexperia BUK9K25-40E/1X is a dual N-channel logic level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 18.2 A at 25 °C. The device exhibits a maximum on-state resistance of 29 mΩ at VGS = 5 V and 25 °C, with a typical value of 24 mΩ. Total power dissipation reaches 32 W at a mounting base temperature of 25 °C. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications. Confirm that the requested part number matches the exact electrical characteristics and thermal ratings defined in the product data sheet before finalizing procurement orders.
Select this component for designs requiring dual N-channel switching in a compact footprint. Ensure the application operates within the specified 40 V drain-source voltage limit and accounts for the 29 mΩ maximum on-state resistance at the intended gate drive voltage. Verify thermal management requirements to maintain junction temperatures below the 175 °C maximum rating during operation.
This device belongs to Nexperia's BUK9K series of dual logic level MOSFETs. These components are engineered using TrenchMOS technology to provide low on-state resistance and fast switching speeds. The LFPAK56D package offers enhanced thermal performance and mechanical robustness suitable for demanding environments.
BUK9K25-40EX
The maximum DC gate-source voltage rating is 10 V, while pulsed ratings allow up to 15 V.
Yes, the BUK9K25-40E is designed and qualified to the AEC-Q101 standard for use in high-performance automotive applications.
The peak drain current is 94 A under pulsed conditions with a pulse duration of 10 µs or less.