BUK9K25-40E/1X

BUK9K25-40E/1X

  • Description:MOSFET 40V 18.2A LFPAK56D
  • Series:-

SKU:ea7d1bdc4721 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 40V 18.2A LFPAK56D
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Bulk
  • Technology:-
  • Configuration:-
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:18.2A (Ta)
  • Rds On (Max) @ Id, Vgs:24mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:6.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:701pF @ 25V
  • Power - Max:32W (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:LFPAK56D
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

BUK9K25-40E/1X

Overview

The Nexperia BUK9K25-40E/1X is a dual N-channel logic level MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 18.2 A at 25 °C. The device exhibits a maximum on-state resistance of 29 mΩ at VGS = 5 V and 25 °C, with a typical value of 24 mΩ. Total power dissipation reaches 32 W at a mounting base temperature of 25 °C. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

  • Dual MOSFET configuration in a single LFPAK56D surface-mounted package
  • Qualified to AEC-Q101 automotive standards for high-performance applications
  • Repetitive avalanche rated for robust operation under transient conditions
  • True logic level gate enabling effective control with low gate-source threshold voltages

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications. Confirm that the requested part number matches the exact electrical characteristics and thermal ratings defined in the product data sheet before finalizing procurement orders.

Selection Notes

Select this component for designs requiring dual N-channel switching in a compact footprint. Ensure the application operates within the specified 40 V drain-source voltage limit and accounts for the 29 mΩ maximum on-state resistance at the intended gate drive voltage. Verify thermal management requirements to maintain junction temperatures below the 175 °C maximum rating during operation.

Part Context

This device belongs to Nexperia's BUK9K series of dual logic level MOSFETs. These components are engineered using TrenchMOS technology to provide low on-state resistance and fast switching speeds. The LFPAK56D package offers enhanced thermal performance and mechanical robustness suitable for demanding environments.

Replacement Considerations

BUK9K25-40EX

FAQ

What is the maximum gate-source voltage rating?

The maximum DC gate-source voltage rating is 10 V, while pulsed ratings allow up to 15 V.

Is the device suitable for automotive applications?

Yes, the BUK9K25-40E is designed and qualified to the AEC-Q101 standard for use in high-performance automotive applications.

What is the peak drain current capability?

The peak drain current is 94 A under pulsed conditions with a pulse duration of 10 µs or less.

BUK9K25-40E/1XBUK9K25-40E/1X

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